triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 12, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice -40 -30 -20 -10 0 10 20 30 11 12 13 14 15 16 17 18 19 frequency (ghz) s-parameter (db) ku-band 3-stage driver packaged amplifier TGA2507-EPU-SM key features ? 11-17 ghz bandwidth ? 25 db nominal gain ? 17 dbm norminal p1db ? bias: 5 - 7 v, 75 ma self bias ? phemt technology ? package dimensions: 4.0 x 4.0 x 0.9 mm (0.157 x 0.157 x 0.035 in) primary applications ? point to point radio ? military ku-band ? ku-band space ?vsat preliminary measured data bias conditions: vd = 6 v, id = 75 ma self bias gain irl orl 13 14 15 16 17 18 19 20 21 22 11 12 13 14 15 16 17 18 frequency (ghz) power out (dbm) p1db psat top view bottom view
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 12, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 8 v 2/ i + positive supply current 114 ma 2/ p in input continuous wave power 20 dbm p d power dissipation 0.91 w 2/ 3 / t ch operating channel temperature 150 0 c4/ 5 / t m mounting temperature (30 seconds) 250 0 c t stg storage temperature -65 to 150 0 c t case package operating temperature -40 to 110 0 c 1/ these ratings represent the maximum operable values for this device 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ when operated at this power dissipation with a base plate temperature of 70 c, the median life is 1.7 e+6 hrs. 4/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 5/ these ratings apply to each individual fet. TGA2507-EPU-SM
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 12, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice table ii electrical characteristics (ta = 25 0 c, nominal) TGA2507-EPU-SM parameter typical units frequency range 11 - 17 ghz drain operating 6 v quiescent current 75 (self bias) ma small signal gain 25 db input return loss 8 db output return loss 8 db output power @ 1 db compression gain 17 dbm table iii thermal information parameter test conditions t ch ( o c) r t jc ( q c/w) t m (hrs) r q jc thermal resistance (channel to case) vd = 6 v id = 80 ma pdiss = 0.48 w 109 81 4.7 e+7 note: worst case condition with no rf applied, 100% of dc power is dissipated, case temperature @ 70 o c
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 12, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice -25 -23 -21 -19 -17 -15 -13 -11 -9 -7 -5 -3 -1 11 12 13 14 15 16 17 18 19 frequency (ghz) return loss (db) 10 12 14 16 18 20 22 24 26 28 30 11 12 13 14 15 16 17 18 19 frequency (ghz) gain (db) TGA2507-EPU-SM preliminary measured data bias conditions: vd = 5-7 v, id =75 ma self bias 5v 6v 7v 6 v 5 v - 5 v 6 v 7v 7v orl irl
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 12, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 13 14 15 16 17 18 19 20 21 22 11 12 13 14 15 16 17 1 8 frequency (ghz) p1db (db) preliminary measured data bias conditions: vd = 5-7 v, id =75 ma self bias TGA2507-EPU-SM 7v 6v 5v 13 14 15 16 17 18 19 20 21 22 11 12 13 14 15 16 17 1 8 frequency (ghz) psat (db) 5v 6v 7v
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 12, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice package layout TGA2507-EPU-SM gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. top view bottom view
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 12, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice package pinout diagram TGA2507-EPU-SM pin description 1nc 2rf input 3, 4 nc 5vd 6, 7 nc 8rf output 9 -12 nc 13 gnd top side dot indicates pin 1 bottom side 13 4 10 tga 2507-sm 12 11 1 2 3 9 8 5 7 6
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 12, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 2.41 x 2.41mm die attach pad 1 2 3 4 5 6 7 8 9 10 11 12 13 thickness mechanical drawing (bottom side) gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA2507-EPU-SM units: millimeters package tolerance: +/- 0.10
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information january 12, 2004 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA2507-EPU-SM recommended board layout assembly all measurement was made with part solder to 0.008 in thick of ro4003 100pf 1uf vd rfin rfout
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